inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1170 description collector-emitter breakdown voltage- : v (br)ceo = 120v(min) high dc current gain- : h fe = 2000( min.) @(i c = 3a, v ce = 2v) low collector saturation voltage- : v ce(sat) = 1.5v(max)@ (i c = 3a, i b = 3ma) b applications driver for solenoid,motor and ge neral purpose applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 120 v v ceo collector-emitter voltage 120 v v ebo emitter-base voltage 6 v i c collector current-continuous 6 a i cm collector current-peak 10 a i b base current-continuous 1 a p c collector power dissipation @t c =25 50 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1170 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; i b = 0 120 v v ce (sat) collector-emitter saturation voltage i c = 3a; i b = 3ma b 1.5 v v be (sat) base-emitter saturation voltage i c = 3a; i b = 3ma b 2.0 v i cbo collector cutoff current v cb = 120v; i e = 0 10 a i ebo emitter cutoff current v eb = 6v; i c = 0 10 a h fe dc current gain i c = 3a; v ce = 2v 2000 c ob output capacitance i e = 0; v cb = 10v; f test = 1mhz 70 pf f t current-gain?bandwidth product i e = -1a; v ce = 12v 50 mhz switching times t on turn-on time 0.5 s t stg storage time 5.5 s t f fall time v cc = 30v, r l = 10 , i c = 3a; i b1 = -i b2 = 3ma, 1.5 s isc website www.iscsemi.cn 2
|
